XANES, XPS and Raman Studies of Hafnium Oxide Thin Films fabricated by RF Magnetron Sputtering at Different Power

Hafnium oxide layer was deposited on unheated silicon wafer and glass substrates at different power by using RF magnetron sputtering technique. The structural property investigated Raman spectroscopy. Moreover, HfO2 structure in monoclinic major phase especially high found from the spectra vibrational modes. In addition, oxidations state of hafnium thin films gained synchrotron-based X-ray absorption spectroscopy (XAS) Hf L3-edge XANES techniques photoelectron (XPS) as well. XPS results show that oxidation is unchanged powers. film prepared higher tends to have lower oxygen vacancy.